2.5V 10 2.5V 1 0.1 ≤60µs PULSE WIDTH Tj = 150°C 1 10 100 1000 VDS, Drain-to-Source Voltage (V) Fig 5. Typical Output Characteristics 1.5 ID = 16A VGS = 4.5V VGS .

PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is .

The IRF6626PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET pack.

IRF6626

IRF6626PbF

IRF6620

IRF6620PBF

IRF6620TRPBF

IRF6621

IRF6621PbF

IRF6621TRPbF

IRF6622

IRF6622PBF

IRF6622TRPBF

IRF6623

IRF6623PBF